Semiconductor device having vertical channels and method of manufacturing the same

ABSTRACT

A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims the benefit of Korean Patent Application No.10-2005-0064067, filed on Jul. 15, 2005, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method ofmanufacturing the same, and more particularly, to a semiconductor devicehaving vertical channels and a method of manufacturing the same.

2. Description of the Related Art

As the length of a channel in a semiconductor device, for example, afield effect transistor (FET), decreases, several characteristics of theFET degrade. For example, short channel effects such as punch-through,drain induced barrier lowering (DIBL), and sub-threshold voltage swingoccur. In addition, there are other problems such as an increase inparasitic capacitance (contact capacitance) between a contact region anda substrate, and an increase in leakage current.

In a FET including an active region having vertical channels on asemiconductor substrate, at least one side surface of a fin is used as achannel. A short channel effect can be prevented by an increase in thelength of the channel, thereby improving current characteristics.Hereinafter, an active region having a vertical channel is referred toas a fin, and a FET having a fin is referred to as a fin-FET.

FIG. 1A is a plan view of a conventional fin-FET. FIG. 1B is across-sectional view of the conventional fin-FET taken along line 1B-1Bof FIG. 1.

Referring to FIGS. 1A and 1B, an element isolation layer 20 whichdefines an active region 12 having vertical channels is formed on asemiconductor substrate 10. A gate electrode 16 covers the active region12, an element isolation layer 21 is disposed along a minor axis of theactive region 12, and an element isolation layer 22 is disposed along amajor axis of the active region 12. For convenience, the gate electrodes16 can be divided into a gate electrode 16 a intersecting the activeregion 12 and a gate electrode 16 b intersecting the element isolationlayer 22 disposed along the major axis of the active region 12.Reference numeral 18 is an interlayer insulation layer including thegate electrode 16 therein.

The gate electrode 16 b intersecting the element isolation layer 22disposed along the major axis of the active region 12 contacts thesidewall of the active region 12 and is buried in the element isolationlayer 22. When electric power is supplied to the buried gate electrode16 b, leakage current is generated in adjacent portions of the activeregion 12, i.e., portions “a” of the active region 12. The leakagecurrent degrades the refresh characteristics of the memory device.

Fin-FETs in which the gate electrode 16 b is not found on the elementisolation layer 22 are disclosed are U.S. Pat. No. 6,396,108 and U.S.Pat. No. 6,583,469. In these disclosures, to prevent the formation ofthe gate electrode 16 on the element isolation layer 22, the gateelectrode 16 has a contact shape or bar shape, and thus the gateelectrode 16 cannot be formed on the element isolation layer 22 disposedalong the major axis of the active region 12.

However, as the design rule decreases, it becomes difficult to form acontact shape or bar shape gate electrode pattern on a substrate. Inparticular, it is difficult to obtain an overlap margin during aphotolithography process in which the gate electrode pattern is formed.

SUMMARY

The present invention provides a method of manufacturing a semiconductordevice having vertical channels that can prevent leakage current causedby a gate electrode intersecting an element isolation layer extendingalong a major axis of an active region, and provide a sufficient overlapmargin. The present invention also provides a semiconductor devicemanufactured using the above method.

According to an embodiment of the present invention, there is provided amethod of manufacturing a semiconductor device having vertical channels,the method including: etching a semiconductor substrate to protrude aplurality of active regions that are adjacent to each other, formingfilling material layers in element isolation regions by filling etchedportions between the active regions, and forming a first mask patternthat extends in a first direction and covers at least a portion betweenadjacent active regions. In addition the method also includes forming asecond mask pattern to extend in a second direction at a predeterminedangle with respect to the first direction, removing an exposed portionof the filling material layers using the first and second mask patternsas etching masks, removing the first and second mask patterns, exposingthe active regions disposed between the filling material layers, andforming gate electrodes on the exposed active regions.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1A is a plan view of a conventional fin-FET;

FIG. 1B is a cross-sectional view taken along line 1B-1B of FIG. 1;

FIGS. 2A through 8A are plan views illustrating a method of forming afin-FET according to an embodiment of the present invention;

FIGS. 2B through 6B are cross-sectional views illustrating the method ofFIGS. 2A through 6A, respectively, taken along line A-A of FIG. 2A;

FIGS. 2C through 8C are cross-sectional views illustrating the method ofFIGS. 2A through 8A, respectively, taken along line B-B of FIG. 2A;

FIGS. 2D through 8D are cross-sectional views illustrating the method ofFIGS. 2A through 8A, respectively, taken along line C-C of FIG. 2A;

FIGS. 7B and 8B are cross-sectional views illustrating the method ofFIGS. 7A and 8A, respectively, taken along line A′-A′ of FIG. 2A;

FIGS. 9A and 10A are plan views illustrating a method of forming afin-FET according to another embodiment of the present invention;

FIGS. 9B and 10B are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line A′-A′ of FIG. 2A;

FIGS. 9C and 10C are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line B-B of FIG. 2A; and

FIGS. 9D and 10D are cross-sectional views illustrating the method ofFIGS. 9A and 10A, respectively, taken along line C-C of FIG. 2A.

DETAILED DESCRIPTION

Hereinafter, the present invention will be described more fully withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. The invention may, however, be embodied inmany different forms and should not be construed as being limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be through and complete, and will fully conveythe concept of the invention to those skilled in the art. In thedrawings, like reference numerals denote like elements, and the sizesand thicknesses of layers and regions are exaggerated for clarity. Itwill also be understood that when a layer is referred to as being “on”another layer or substrate, it can be directly on the other layer orsubstrate, or intervening layers may also be present. In thedescriptions, like reference numerals denote like elements.

In some embodiments of the present invention, a gate electrode is formedon an element isolation layer disposed along a major axis of an activeregion in a fin-FET using a line shaped mask pattern. The bottom portionof the gate electrode is filled with filling material layer, therebypreventing leakage current in a semiconductor substrate due to the gateelectrode.

In some embodiments of the present invention, the gate electrode isformed using a damascene process. In addition, a fin-FET according to anembodiment of the present invention may have a double gate electrodeformed using the damascene process or having a triple gate electrodeformed using the damascene process.

FIGS. 2A through 8A are plan views illustrating a method of forming afin-FET according to an embodiment of the present invention. FIGS. 2Bthrough 6B are cross-sectional views illustrating the method of FIGS. 2Athrough 6A, respectively, taken along line A-A of FIG. 2A. FIGS. 7B and8B are cross-sectional views illustrating the methods of FIGS. 7A and8A, respectively, taken along line A′-A′ of FIG. 2A. FIGS. 2C through 8Care cross-sectional views illustrating the method of FIGS. 2A through8A, respectively, taken along line B-B of FIG. 2A. FIGS. 2D through 8Dare cross-sectional views illustrating the method of FIGS. 2A through8A, respectively, taken along line C-C of FIG. 2A.

Referring to FIGS. 2A through 2D, a device isolation layer or an elementisolation layer 112, which defines an active region 102 having verticalchannels, is formed on a semiconductor substrate 100. In a method offorming the element isolation layer 112, mask layer 105, defining theelement isolation layer 112 and each including a pad oxide layer 104 anda pad nitride layer 106, are formed on the semiconductor substrate 100using a conventional photolithography process. The pad oxide layers 104are formed to reduce stress between the substrate 100 and the padnitride layers 106, and may have a thickness of about 20 to about 200 Å,and preferably about 100 Å. The pad nitride layers 106 are used as ahard mask when etching to form a recessed region 113 and is deposited toa thickness of about 500 to about 2,000 Å, and preferably about 800 toabout 850 Å. The deposition method for the pad nitride layers 106 may bea conventional method, such as chemical vapor deposition (CVD),sub-atmospheric CVD (SACVD), low pressure CVD (LPCVD), or plasmaenhanced CVD (PECVD).

The semiconductor substrate 100 is exposed using an anisotropic dryetching method. The semiconductor substrate 100 is then etched to apredetermined depth using the mask layers 105 as an etching mask to formrecessed regions 113. A photoresist pattern (not illustrated) is removedusing conventional methods, such as ashing using oxygen plasma ororganic stripping. The recessed region 113 is formed to a sufficientdepth to isolate elements. Next, sidewall oxide layers 108 are formed onthe entire surface of the recessed region 113. The sidewall oxide layers108 are formed on the inner walls and bottom of the recessed region 113to compensate for the damage caused during the etching process used informing the recessed region 113. The sidewall oxide layer 108 is athermal oxide layer or a CVD oxide layer, and may have a thickness ofabout 20 to about 200 Å.

Next, a nitride layer liner 110 covering the sidewall oxide layer 108and the exposed mask layer 105 is deposited. The nitride layer liner 110may be formed along the inner surfaces of the recessed region 113. Thenitride layer liner 110 prevents oxidization of the sidewall oxide layer108 in subsequent processes and improves the insulating characteristicsof a later formed element isolation layer. The nitride layer liner 110is formed to a thickness of about 50 to about 300 Å using CVD. A cappinglayer (not illustrated) may be formed on the nitride layer liner 110.The capping layer prevents damage to the nitride layer liner 110 insubsequent processes and may be formed of middle temperature oxide(MTO).

The forming of the nitride layer liner 110 can be omitted, if desired.In addition, the pad nitride layers 106 may be removed, or may remain toprevent damage to the active regions 102 in subsequent processes.

The recessed regions 113 are filled with a filling material layer. Thefilling material layer is an insulation layer and may be chosen from anundoped silicate glass (USG) layer, an high-density plasma (HDP) oxidelayer, a tetraethylorthosiliate (TEOS) layer formed using PECVD, and anoxide layer formed using PECVD. The HDP oxide layer, which is a thinlayer, may be the most suitable for reclaiming the recessed regions 113.The HDP CVD process may be a combination of a CVD process and an etchingprocess using sputtering. In the HDP CVD process, a depositing gas fordepositing a material layer and a sputtering gas with which a depositedmaterial layer is etched via sputtering are supplied into a chamber. Inan embodiment of the present invention, SiH₄ and O₂ are supplied intothe chamber as depositing gases and an inert gas, such as an argon gas,is supplied into the chamber as the sputtering gas. Some of the supplieddepositing gas and sputtering gas is ionized by plasma induced by highfrequency electric power in the chamber. Biased high frequency electricpower is supplied to a wafer chuck, i.e., an electrostatic chuck, in thechamber where the substrate is loaded, thus accelerating the ionizeddepositing gas and sputtering gas to the surface of the substrate. Theaccelerated depositing gas ions form a silicon oxide layer, and theaccelerated sputtering gas ions sputter the deposited silicon oxidelayer. Therefore, the element isolation layer 112 formed of HDP oxide isthin and has good gap fill characteristics.

The recessed region 113 filled with the filling material layer is thenplanarized until the top surface of the nitride layer liner 110 isexposed to form the element isolation layer 112. The planarizationprocess may be performed using chemical mechanical polishing (CMP) or anetch-back process. In the planarization process, the nitride layer liner110 is used as a planarization stopper. For example, when theplanarization process is performed using CMP, the nitride layer liner110 acts as a CMP stopper. A slurry used during CMP may etch the elementisolation layers 112, for example, the HDP oxide layer, faster than thenitride layer liner 110. Accordingly, a slurry including a seria groupabrasive may be used.

Referring to FIGS. 3A through 3D, a first mask pattern 114 covering themajor axis of the active region 102 is formed. The first mask pattern114 may cover first element isolation layers 120 (see FIG. 7A) betweenthe adjacent active regions 102 along the direction of the major axis ofthe active region. The first mask pattern 114 may be arranged instripes. To form the first mask pattern 114, a mask material layer isformed on the element isolation layer 112 and the active regions 102.Next, a photoresist pattern (not illustrated) defining the first maskpattern 114 covering the major axis of the active region 102 is defined.The mask material layer is etched in the shape of the photoresistpattern to form the first mask pattern 114.

The first mask pattern 114 is used as a hard mask for forming gateelectrodes and has a sufficient etch selectivity to the elementisolation layer 112. For example, if the element isolation layer 112 isa silicon oxide layer, the first mask pattern 114 may be a siliconnitride layer. The first mask pattern 114, e.g., the silicon nitridelayer, may be deposited to a thickness of about 2,000 to about 6,000 Å,and preferably about 3,500 to about 4,500 Å. The deposition method maybe a conventional method, for example, CVD, SACVD, LPCVD, or PECVD.

The width of the first mask pattern 114 is equal to or less than thewidth of the active region 102. For example, the width of the first maskpattern 114 may be about 1 to about 15 nm less than the width of theactive region 102, and preferably about 3 to about 8 nm less than thewidth of the active region 102, thereby enhancing an overlap. However,when the width of the first mask pattern 114 is less than this, aportion of the first element isolation region 120 along the major axisof the active region 102 may be etched. To prevent a portion of thefirst element isolation region 120 from being etched, auxiliary patternsmay be further formed to correspond to the first element isolation layer120 on both sides of a portion of a reticle used to form the first maskpattern 114.

Although not illustrated in detail in the drawings, the first maskpattern 114 may be formed from one end of a plurality of the activeregions 102 to another end of a plurality of the active regions 102. Forexample, the arrangement of the plurality of the active regions 102 maybe continuous from one end to another end of a cell region.

The process margin of the first mask pattern 114 having a line shape forforming a gate electrode is greater than the process margin of a maskpattern with a contact shape or a bar shape. Due to the large processmargin, greater integration can be obtained, and thus the wavelength ofthe light source of a light emitting apparatus can be increased or alight emitting apparatus having a conventional light source and thenumber of apertures can be used without increasing the number ofapertures. Accordingly, the first mask pattern 114 having a line shapecan be efficiently applied to the formation of a fine pattern. Inaddition, the first mask pattern 114 having a line shape can prevent thegeneration of striation during the formation of the gate electrode, andthus an additional hard mask for removing the striation is unnecessary.

Referring to FIGS. 4A through 4D, filling layers 116 are formed on theelement isolation layer 112 to fill the space between the first maskpatterns 114, if desired. Each of the filling layers 116 may be aninsulation layer chosen from an USG layer, an HDP oxide layer, a TEOSlayer formed using PECVD, and an oxide layer formed using PECVD.However, since the element isolation layers 112 and the filling layers116 may be simultaneously removed in a subsequent process, the elementisolation layers 112 and the filling layers 116 may be formed ofsubstantially the same material. For example, the element isolationlayers 112 and the filling layers 116 may both be HDP oxide layers.

The filling layers 116 are planarized to the top surface of the firstmask pattern 114. The planarization process is performed using CMP or anetch-back process. In the planarization process, the first mask pattern114 is used as a planarization stopper layer. For example, when thefilling layers 116 are planarized using the CMP, the first mask pattern114 acts as a CMP stopper. A slurry used during the CMP may etch thefilling layers 116, for example, the HDP oxide layer, faster than thefirst mask pattern 114. A slurry including a seria group abrasive may beused. Here, the filling layers 116 are used for the planarization, andthus are optionally formed.

Referring to FIGS. 5A through 5D, a second mask pattern 118, i.e., aphotoresist pattern, is formed. The second mask pattern 118 extends at apredetermined transverse angle, for example, a right angle or an acuteangle, with respect to the major axis of the active region 102, andincludes stripes separated from each other by a predetermined distance.The second mask pattern 118 exposes portions of top surfaces of thefilling layers 116 and portions of the first mask pattern 114.

Referring to FIGS. 6A through 6D, portions of the element isolationlayers 112 along the minor axis of the active regions 102 are removedusing the second mask pattern 118 and the first mask pattern 114 as anetching mask to form second element isolation layers 122. That is,portions of the filling layers 116 and the element isolation layers 112disposed along the minor axis of the active regions 102 are removed bywet etching. For example, when the element isolation layers 112 and thefilling layers 116 are HDP oxide layers, they can be removed using abuffered oxide etchant (BOE), which is a mixed solution of diluted HF,NH₄F, or HF and ionized water.

In an embodiment of the present invention, a first direction is definedalong a major axis of the active region, for example, a direction inwhich line B-B of FIG. 2A extends. A first element isolation region 120(FIG. 6C) disposed between the active regions extends along the firstdirection. A second direction may be a minor axis of the active region,for example, a direction in which line A-A of FIG. 2A extends. Anelement isolation region disposed between active regions extends alongthe second direction. In other words, the element isolation regionextending along the second direction may be an element isolation regiondisposed in a region in which the line C-C of FIG. 2A extends. Theelement isolation region extending along the second direction can bedivided into a second embodiment isolation region 122 which is recessedand a third element isolation region 124 which is not recessed. Thus,the element isolation layer may be divided into the first, second, andthird element isolation regions (120, 122 and 124 respectively of FIGS.6B, 6C and 6D) for convenience of explanation and ease of understanding,not for limiting the scope of the present invention.

Here, the degree to which the element isolation layers 112 are removeddetermines the channel lengths of the fin-FET according to thisembodiment of the present invention. The recess depth is sufficient toisolate the adjacent active regions 102. As a result of the etching, afirst element isolation layer 120 is formed between the active regions102 along the first direction, and recessed second element isolationlayers 122 and unrecessed third element isolation layers 124 arealternatively disposed along the second direction.

Referring to FIGS. 7A through 7D, the active regions 102 disposedbetween the second element isolation layers 122 are exposed.Specifically, the first mask pattern 114, the nitride layer liner 110,the mask layers 105, and the sidewall oxide layers 108, which cover theactive regions 102, are removed. The exposure of the active regions 102includes three operations because the nitride layer liners 110 disposedbetween the second element isolation layers 122 and the active regions102 may be damaged in the processes of removing several layers,resulting in the generation of humps. A hump can generate leakagecurrent and thus degrade current characteristics.

First, the first mask pattern 114, the nitride layer liner 110, and thepad nitride layers 106 disposed on the active regions 102 are removed byanisotropic dry etching. The nitride layers, i.e., the first maskpattern 114, the nitride layer liners 110, and the pad nitride layers106, can be removed using a fluoride carbon group gas such as aC_(x)F_(y) group gas and a C_(a)H_(b)F_(c) group gas, for example, CF₄,CHF₃, C₂F₆, C₄F₈, CH₂F₂, CH₃F, CH₄, C₂H₂, C₄F₆, or a combinationthereof. Argon gas may be used as an environmental gas.

Second, the portions of the nitride layer liner 110 remaining on thesidewalls of the active regions 102 are removed by isotropic wet etchingusing H₃PO₄. Third, the sidewall oxide layers 108 and the pad oxidelayers 104 are removed by isotropic wet etching. Here, a BOE including amixed solution of diluted HF, NH₄F, or HF and ionized water may be usedas an etching solution.

When the surfaces of the active regions 102 are exposed, gate insulationlayers 126 covering the active regions 102 are formed. The gateinsulation layer 126 may be a silicon oxide layer, a hafnium oxidelayer, a zirconium oxide layer, an aluminum oxide layer, a tantalumoxide layer, or a lanthanum oxide layer, which is deposited using CVD orALD.

Referring to FIGS. 8 a and 8D, gate electrodes 128 which fill therecessed regions on the second element isolation layers 122 and coverportions of the active regions 102 and the first element isolationlayers 120 are formed. Specifically, the gate electrodes 128 aredeposited to fill the spaces above the second element isolation layers122 and completely cover the top surface. The gate electrodes 128 arepatterned using conventional photolithography so as to extend at apredetermined angle, for example, a right angle or an acute angle, withrespect to the major axis of the active region 102, and are separatedfrom each other by a predetermined distance. The gate electrodes 128 areelectrically insulated from each other by interlayer insulation layers130. The gate electrodes 128 may have the same 2-dimensional shape asthe second mask patterns 118 in FIG. 5.

The gate electrodes 128 according to this embodiment of the presentinvention are formed using a damascene process. Accordingly, an overlapmargin required to form the gate electrodes 128 is sufficient. That is,the gate electrodes 128 fill the spaces above the second elementisolation layer 122 and cover the top surface and both side surfaces ofthe active regions 102. The fin-FET according to the first embodiment ofthe present invention has a triple gate structure in which the gateelectrodes 128 cover the top surface and both side surfaces of theactive regions 102.

Each of the gate electrodes 128 may include a polysilicon layer, asilicide layer, and a capping insulation layer sequentially stacked.However, instead of the polysilicon layer, a monolayer or a multilayercomposed of amorphous silicon, poly Si—Ge, and/or a material includingmetal can be used. The material including metal may include a metal suchas tungsten or molybdenum or may include a conductive metal nitride,such as titanium nitride, tantalum nitride, or tungsten nitride. Thesilicide layer may or may not be included. The capping insulation layermay comprise a material having a sufficient etch selectivity to aninterlayer insulation layer which is deposited in a subsequent process,and may be, for example, a silicon nitride layer.

For convenience, the gate electrodes 128 can be divided into firstelectrodes 128 a intersecting the active regions 102 and secondelectrodes 128 b intersecting the first element isolation layer 120disposed along the first direction. The top surfaces of the firstelement isolation layers 120 are at the same level or higher than thetop surfaces of the active regions 102. The second electrodes 128 b aredisposed on the first element isolation layers 120, and thus thegeneration of leakage current in the semiconductor substrate 100 due tothe electric power supplied to the second electrodes 128 b can beprevented because the electric field formed by the second electrodes 128b is blocked by the first element isolation layers 120. Meanwhile, bothends of the second electrodes 128 b are connected to the gate electrodesdisposed on the second element isolation layers 122 to be extended.

FIGS. 9A and 10A are plan views illustrating a method of forming afin-FET according to another embodiment of the present invention. FIGS.9B and 10B are cross-sectional views illustrating the method of FIGS. 9Aand 10A, respectively, taken along line A′-A′ of FIG. 2A. FIGS. 9C and10C are cross-sectional views illustrating the method of FIGS. 9A and10A, respectively, taken along line B-B of FIG. 2A. FIGS. 9D and 10D arecross-sectional views illustrating the method of FIGS. 9A and 10A,respectively, taken along line C-C of FIG. 2A.

Since the defining of the active region 102 and the forming of the firstmask pattern 114 is the same as in the first embodiment as illustratedin FIGS. 2A through 6D, a description thereof will not be provided forthe present embodiment.

Referring to FIGS. 9A through 9D, the active regions 102 disposedbetween the second element isolation layers 122 are exposed.Specifically, the first mask pattern 114, the nitride layer liner 110,portions of the pad nitride layers 106, and the sidewall oxide layers108 which cover the active regions 102 are removed. The exposure of theactive region 102 includes three operations because the nitride layerliners 110 disposed between the second element isolation layers 122 andthe active regions 102 may be damaged in the process of removing severallayers, resulting in the generation of humps. The hump can generateleakage current and thus degrade current characteristics.

First, the first mask pattern 114 and the nitride layer liner 110disposed on the active regions 102 are removed by anisotropic dryetching. The nitride layers, i.e., the first mask pattern 114 and thenitride layer liner 110, can be removed using a fluoride carbon groupgas such as C_(x)F_(y) group gas and a C_(a)H_(b)F_(c) group gas, forexample, CF₄, CHF₃, C₂F₆, C₄F₈, CH₂F₂, CH₃F, CH₄, C₂H₂, C₄F₆, or acombination thereof. Argon gas may be used as an environmental gas. Themask layer 105 may not be etched, or the upper portion of the mask layer105 may be etched to a predetermined height.

Second, portions of the nitride layer liner 110 remaining on thesidewalls of the active regions 102 are removed by isotropic wet etchingusing H₃PO₄. Third, the sidewall oxide layers 108 and the pad oxidelayers 104 are removed by isotropic wet etching. Here, a BOE being amixed solution of diluted HF, NH₄F, or HF and ionized water may be usedas an etching solution.

When the side surfaces of the active regions 102 are exposed, gateinsulation layers 226 are formed to cover the active regions 102 andmask layers 105, including the residual pad nitride layers. The gateinsulation layer 226 may be a silicon oxide layer, a hafnium oxidelayer, a zirconium oxide layer, an aluminum oxide layer, a tantalumoxide layer, or a lanthanum oxide layer deposited using CVD or ALD.

Referring to FIGS. 10A through 10D, gate electrodes 128 which fill therecessed regions on the second element isolation layers 122 and coverportions of the active regions 102 and the first element isolationlayers 120 are formed. Specifically, the gate electrodes 128 aredeposited to fill the spaces above the second element isolation layers122 and to completely cover the top surface. The gate electrodes 128 arepatterned using conventional photolithography so as to extend at apredetermined angle, for example a right angle or an acute angle, withrespect to the major axis of the active region 102, and are separatedfrom each other by a predetermined distance. The gate electrodes 128 areelectrically insulated from each other by interlayer insulation layers230. The gate electrodes 128 may have the same 2-dimensional shape asthe second mask pattern 118 shown in FIG. 5.

The gate electrodes 128 according to the second embodiment of thepresent invention are formed using a damascene process. Accordingly, anoverlap margin required to form the gate electrodes 128 is sufficient.That is, the gate electrodes 128 fill the spaces above the secondelement isolation layer 122 and cover both side surfaces of the activeregions 102. The fin-FET according to the second embodiment of thepresent invention has a double gate structure in which the gateelectrodes 128 cover both sides of the active regions 102.

Each of the gate electrodes 128 may include a polysilicon layer, asilicide layer, and a capping insulation layer sequentially stacked.However, instead of the polysilicon layer, a monolayer of a multilayercomposed of amorphous silicon, poly Si—Ge, and/or a material includingmetal can be used. The material including metal may include a metal suchas tungsten or molybdenum or may include a conductive metal nitride,such as titanium nitride, tantalum nitride, or tungsten nitride. Thesilicide layer may or may not be included. The capping insulation layermay be formed of a material having a sufficient etch selectivity to aninterlayer insulation layer which is deposited in a subsequent process,and may be, for example, a silicon nitride layer.

For convenience, the gate electrodes 128 can be divided into firstelectrodes 128 a intersecting the active regions 102 and the secondelectrodes 128 b intersecting the first element isolation layer 120disposed along the first direction. The top surfaces of the firstelement isolation layers 120 are at the same level or higher than thetop surface of the active regions 102. The second electrodes 128 b aredisposed on the first element isolation layers 120, and thus thegeneration of leakage current in the semiconductor substrate 100 due tothe electric power supplied to the second electrodes 128 b can beprevented because the electric field produced by the second electrodes128 b is blocked by the first element isolation layers 120. Meanwhile,both ends of the second electrodes 128 b are connected to the gateelectrodes disposed on the second element isolation layers 122 to beextended.

The method of manufacturing a semiconductor device having a verticalchannels according to the present invention can prevent the generationof leakage current in the semiconductor substrate since gate electrodesare formed on element on element isolation layers which extend upward tothe same level or higher than the top surfaces of active regions.

In addition, in the method of manufacturing a semiconductor devicehaving vertical channels according to the present invention, gateelectrodes are formed using a line shape mask pattern, thereby obtaininga sufficient overlap margin.

In addition, the gate electrode is manufactured using a damasceneprocess, thereby significantly increasing an overlap margin.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. A semiconductor device having vertical channels, the devicecomprising: a plurality of active regions protruded from a top surfaceof the semiconductor substrate; first element isolation layers whichseparate adjacent active regions, the first isolation layers extendingin a first direction and having top surfaces that are higher than atleast the top surfaces of the active regions; second element isolationlayers which extend at a predetermined angle with respect to the firstdirection, separate the adjacent active regions, and have top surfaceslower than the top surfaces of the active regions so as to expose atleast a portion of the sidewalls of the active regions such thatvertical channels can be formed; a gate insulation aver formed on theplurality of active regions; and gate electrodes formed on the firstelement isolation layers and the gate insulation layer, wherein the gateinsulation layer and the gate electrodes cover the sidewalls and topsurfaces of the exposed portion of the active regions.
 2. Thesemiconductor device of claim 1 further comprising a nitride layer linerformed between the second element isolation layers and the activeregions.
 3. The semiconductor device of claim 1, wherein the first andsecond element isolation layers include silicon oxide layers.
 4. Thesemiconductor device of claim 1 further comprising third elementisolation layers that contact both side surfaces of the second elementisolation layers, and have top surfaces higher than the top surfaces ofthe active regions.
 5. The semiconductor device of claim 4, wherein thesecond element isolation layers and the third element isolation layersare alternately disposed along the direction of the predetermined anglewith respect to the first direction.
 6. The semiconductor device ofclaim 1, wherein the first element isolation layers contact the secondelement isolation layers.
 7. The semiconductor device of claim 1,wherein the gate electrode extends at a transverse angle with respect tothe first direction.
 8. The semiconductor device of claim 1, wherein thesemiconductor device is a fin field effect transistor (FET).
 9. Thesemiconductor device of claim 1, wherein the second element isolationlayers extend in a second direction, the second direction not coplanarwith the first direction.